Researches on the injected charge potential barrier occurring in the static induction transistor in the high current region

Abstract

Two different potential barriers of the static induction transistor (SIT) that occur in low and high current ranges are studied in this paper. The static induction potential barrier (SIPB) in the channel dominates in the low current range, but in the middle and high current regions the injected charge potential barrier (ICPB) near the source predominates. The physical mechanisms underlying the two kinds of potential barrier are researched in depth. I–V characteristics of the SIT in the high current region have been derived mathematically using different approximate functions between the drift velocity and electric field. The analytical expressions to estimate the current in the middle and high current ranges are presented, and the simulated results are agree well with experiments. With the increase in drain voltage, the operating state of the SIT gradually comes into the high current range and ICPB control mechanisms come into effect. The ICPB controlling mechanism and corresponding I–V relationships of the SIT in the high current range are evidently different from that in the low current range. The dependence of the ICPB on gate voltage is also illustrated in this paper.