Research Update: Point defects in CdTexSe1−x crystals grown from a Te-rich solution for applications in detecting radiation

R Gul,R B James,G S Camarda,W Lee,Y Cui,A Burger,G Yang,U N Roy,A Hossain,A E Bolotnikov

doi:10.1063/1.4917270

Abstract

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Current Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from 1 to 30 V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

Highlights

Research Update: Point defects in CdTexSe1−x crystals grown from a Te-rich solution for applications in detecting radiation
We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects
The focus of this paper is on detectors made from a different material, i.e., cadmium telluride selenide (CdTexSe1−x, x = 0.95)

Summary

Introduction

Research Update: Point defects in CdTexSe1−x crystals grown from a Terich solution for applications in detecting radiation. (Received 17 September 2014; accepted 30 March 2015; published online 15 April 2015) Current Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities.

Results

Conclusion