Abstract
The fast recovery diodes (FRDs) are widely used in high frequency and high power applications. The forward characteristics of the FRDs, such as the forward voltage drop, are very important to determine the property of the FRDs. The forward characteristics of the FRD always greatly depend on the temperature. Here, in this paper, we researched some FRDs with special structures by simulation and proposed a new structure to farther improve the temperature coefficient of the FRDs. It is found that, a diode with low P+ emitter efficiency, and a P+ buried layer at anode junction has a better forward temperature coefficient. It proposes a guiding way to design the FRDs which are worked in the positive temperature coefficient (PTC) area.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
