Research on ultra-smooth and high efficiency polishing technology of the third generation semiconductor single crystal SiC

Abstract

Single crystal silicon carbide (SiC), the third-generation semiconductor material, has many advantages, such as wide band gap, low thermal expansion coefficient and high thermal conductivity, etc. It has a wide application space in the field of electronic equipment. Its surface quality has great influence on the performance of electronic devices. Therefore, the ultrasmooth polishing of single crystal silicon carbide is very important. At present, the main problems of single crystal silicon carbide processing are poor surface quality and low removal efficiency. In this paper, the ultra-smooth and efficient polishing of single crystal silicon carbide materials is the main research goal. The polishing experiment is carried out by using a uniaxial polishing machine, and the computer-controlled optical shaping (CCOS) immersion polishing is introduced. To achieve super smooth and efficient polishing of single crystal silicon carbide, the corresponding polishing fluid was prepared by Fenton reaction for chemical mechanical polishing (CMP), and KMnO4 polishing fluid was also used for CMP. A series of experiments were carried out by setting different process parameters. The effects of pH value of Fenton fluid, catalyst concentration, type of polishing pad on polishing efficiency and surface roughness were studied, and the influence rules on polishing effect were summarized, so as to seek the optimal process parameters and realize ultrasmooth and low defect polishing of single crystal silicon carbide by combination.