Abstract

With the increase of system complexity and integration density, there is an urgent need to improve the interconnection and transmission performance between different chips in the integrated system. Three-dimensional (3D) integration is one of the key technologies to meet the requirements of integrated circuits (IC). TSV technology plays an important role in 3D integration, so it is important to analysis and study its electrical characteristics. In this paper, the transmission characteristics of GSG-TSV structure at high frequencies (60~100GHz) are designed and studied by using high frequency structure simulator (HFSS 15.0). The influence of physical structure and material on the electrical performance of TSV is evaluated and analyzed in detail.

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