Abstract
The negative resistance characteristics of Trench MOS Barrier Schottky (TMBS) diodes were studied by simulation and theoretical calculation. A reasonable simulation model was established according to the experimental results of Schottky Barrier Diodes (SBD), which were utilized to simulate the TMBS diodes. A theoretical calculation model of TMBS diodes under forward bias was constructed based on existing SBD theoretical analysis to systematically understand the simulation results. Both simulation and theoretical calculation demonstrate that the negative resistance characteristics of TMBS diodes under forward bias are caused by the accumulation of minority carriers at the epitaxial region and the accumulation of majority carriers at the epitaxial region and oxide layer.
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