Abstract
As the core device of quantum information field, single photon avalanche photodiode (SPAD) is a solid-state single photon detector with pico-second level time-resolution, low bias voltage, high signal-to-noise ratio and low cost. However, the photon detection efficiency (PDE) of SPAD is not ideal. Traditional method is to optimize the device structure, and the dark count or time resolution characteristics of the device might be sacrificed. The metasurface integrated on SPADs provides a novel approach to achieve higher PDE. As a result, the SPAD device structure could be independently designed to realize low dark count rate and good time resolution. In this paper, many kinds of metasurface structures that could enhance the incident photons absorption, are analyzed. Those structures compatible with CMOS or other easy to mass produce processes are attractive to be adopted to make revolutionary changes to conventional SPAD. As a results, the metasurface integrated SPAD would strongly push its applications in the quantum information, single photons imaging, life medicine, and other low level light detections.
Highlights
Quantum information technology is considered to be a key technology for the future
[9,10,11,12], the single photon avalanche photodiode (SPAD) integrated with nano-structures was presented to overcome this drawback [13]
When this new SPAD accepted the perpendicular incidence of photons, some photons would change their direction in the nano-structure and the travel path in the absorbed layer of these photons was increased, which improves the photon detection efficiency (PDE) dramatically [14]
Summary
As the core device of the quantum information field, the single photon avalanche photodiode (SPAD) is a solid-state single photon detector with a pico-second level time-resolution, low bias voltage, high signal-to-noise ratio, and a low cost. The SPAD device structure could be independently designed to realize a low dark count rate and a good time resolution. Many kinds of metasurface structures that could enhance the incident photons absorption, are analyzed. Those structures compatible with CMOS or other mass produced processes are attractive for revolutionary changes to conventional SPAD. A metasurface integrated SPAD would greatly push its applications in the field of quantum information, single photons imaging, life medicine, and other low-level light detections
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