Abstract
The effects of proton irradiation on ultraviolet 4H-SiC single photon avalanche photodiodes (SPADs) are investigated for the first time. The SPADs, grown by chemical vapor deposition, were designed for operation in the ultraviolet having dark count rates (DCR) of about 30 kHz and single photon detection efficiency (SPDE) of 4.89%. The SPADs were irradiated with 2 MeV protons to a fluence of 1012 cm-2. After irradiation, the avalanche breakdown voltage shifted downward 0.6 V from 113 V and the I-V characteristics show forward voltage ( ; 1%) after irradiation. The devices were demonstrated to show proton radiation tolerance for geosynchronous space applications.
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