Abstract
In this study, a series of Ga-As-S glasses tailored by adding Ga as the host for Er3+ ions were prepared and characterized. The effects of the introduction of Ga on the structure change and the Er3+ middle infrared emission intensity have been studied by Raman scattering, X-ray diffraction and fluorescence spectra. The results show the incorporating of Ga into the As2S3 glass induced the dissociation of [AsS3/2] pyramids units in behalf of forming tetrahedral [GaS4/2]. By adjusting the Ga content, this host can be doped up to 2mol% Er3+ without crystallization and concentration quenching effect. Besides, this system has very good thermal stability (ΔT>230°C) and strong broadband mid-infrared emission centered at 4700nm, suggests that this system has the potential to be used as mid-infrared fiber material.
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