Abstract
Silicon Microchannel Plate（MCP）is a new image multiplier devices based semiconductor process technology. Compared with the traditional glass MCP, Silicon MCP has an advantage in technology that the dynode materials and the substrate materials are separate. At the same time, the dynode preparation process and the microchannel arrays are also separate. Two different dynode conductive layer films are prepared: polysilicon conductive films prepared by low pressure chemical vapor deposition (LPCVD) and AZO thin films coated by atomic layer deposition (ALD). The conductive films coated by ALD are superior to dynode conductive films prepared by LPCVD. By comparing the resistivity of conductive polysilicon thin film and AZO thin film of different Al concentrations doped, AZO thin film of different Al concentrations doped is a more suitable conductive layer dynode material to satisfy the MCP conductive layer resistivity requirements.
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