Abstract
Microchannel Plate (MCP) is an advanced two-dimensional electron multiplier device, which has excellent characteristics of transmitting and enhancing electronic images. Atomic Layer Deposition (ALD) is a thin film growth technology, which is very suitable for the structural design of the inner wall of MCP. The purpose of adjusting the performance of MCP can be achieved by uniformly depositing materials with different thicknesses and specific properties on the inner wall. In this paper, conductive layer of MCP was prepared by ALD. The resistance characteristics of ALD-MCP prepared by the above process were tested by MCP photoelectric imaging comprehensive tester. The effects of ZnO percentage, ZnO/Al2O3 structure, conductive layer thickness and deposition temperature on the resistance of ALD-MCP were systematically analyzed and studied. On this basis, the structure of ALD-MCP conductive layer is optimized. The results show that when the ZnO percentage is 26%~30%, the conductive layer structure is designed as [15Zn:(40~42) Al] * 6, and the conductive layer thickness is 30~40nm, the MCP with resistance of 50~200MΩ can be obtained, which meets the needs of practical application. Finally, the resistance characteristics of ALD-MCP were tested, and the conduction mechanism was analyzed by XPS technology. The results show that the ALD-MCP conductive layer has a negative temperature resistance coefficient, and the I-V curve conforms to Ohmic law in the low voltage region. However, with the increase of applied voltage, the slope of the I-V curve increases, showing the phenomenon of space charge limiting conduction (SCLC), which may be related to the concentration of oxygen vacancy in the conductive layer.
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