Research on performance of infrared photodetectors based on lead sulfide quantum dots

Abstract

Quantum dot materials are widely used in infrared photodetectors, solar cells, optical fiber communication and other fields due to their unique advantages. These devices cause the gaps between quantum dots to be occupied by short-chain organic ligands, which limit the transport of charge carriers between quantum dots, and often exhibit lower response and poorer performance. In order to solve these problems, this paper starts from the preparation of lead sulfide quantum dot field effect devices, uses different ligands to modify the surface of lead sulfide quantum dots, and studies the influence of different ligands on the electrical properties of lead sulfide quantum dots. Combining plasmonic nanostructures with semiconductors is a reliable way to improve the performance of various optoelectronic devices. On this basis, this paper studies high-performance photodetectors with different structures from the design point of view, using double-layer structures to improve the structure of infrared photodetectors. The responsivity, specific detection rate, photosensitivity and other properties of infrared photodetection devices based on lead sulfide quantum dots are improved, which has certain theoretical significance for the construction of new nanoelectronics and optoelectronic devices.