Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs

Chao Peng,Zhifeng Lei,Yun Huang,Yiqiang Chen,Zhangang Zhang,Rui Gao,Yun-Fei En

doi:10.1109/access.2021.3056151

Abstract

The degradation mechanisms for pMOSFETs from a 130 nm partially-depleted silicon on insulator (PDSOI) technology under the combined effects of total ionizing dose (TID) and negative bias temperature instability (NBTI) are investigated. The TID and NBTI related degradations show an opposite trend as gate oxide scaling, which implies the different traps are activated during irradiation and NBTI stress. The radiation-induced traps can affect the NBTI effect of pMOSFET, especially for the ON bias irradiation. The irradiated I/O pMOSFET shows a smaller threshold voltage shift than the un-irradiated device under the same NBTI stress at the early stress stage. It may be contributed to the enhanced Fowler-Nordheim electron injection during NBTI stressing after ON bias irradiation. But the irradiation also increases the time exponent $n$ from 0.11 to 0.13 for Core pMOSFETs and from 0.18 to 0.20 for I/O devices. It means that the NBTI degradations become worse after ON bias irradiation in a long time scale. This phenomenon is attributed to the change of trap characteristics caused by irradiation. As a result, the NBTI lifetime of Core device is reduced by nearly three orders of magnitude and the lifetime of I/O device is reduced by five times after ON bias irradiation at the rated operating voltage.

Highlights

Silicon-on-insulator (SOI) technology has become attractive for space application due to the natural advantage on single event effect hardening [1], [2]
The total ionizing dose (TID) and negative bias temperature instability (NBTI) related degradations show an opposite trend as gate oxide scaling, which implies the different traps are activated during irradiation and NBTI stress
The NBTI stress-induced threshold voltage shifts of all the samples are extracted from the complete Id -Vg curve and shown in Tab. 2

Summary

INTRODUCTION

Silicon-on-insulator (SOI) technology has become attractive for space application due to the natural advantage on single event effect hardening [1], [2]. The ionizing radiation can produce electron-hole pairs in the oxide of MOSFET. It is interesting to note that the mechanisms of trap formation are different, both TID and NBTI will produce interface traps and oxide trap charges in the gate oxide of MOSFET, resulting in similar parameter degradations [6]–[8]. The degradation mechanisms of SOI devices under the combined effect of TID and NBTI have not been well studied. There are still great disputes on the formation mechanism of NBTI defects under the coupling of ionizing radiation, as well as the correlation and interaction of defects produced by these two different effects. The performance degradations of SOI MOSFETs under the dual stresses of irradiation and reliability may be different from that under single stress. The energy distributions of NBTI-induced traps are extracted for the un-irradiated and irradiated devices to show the correlation of TID and NBTI-induced traps in gate oxide

EXPERIMENTAL DETAILS

RESULTS

CONCLUSION