Abstract
Light-emitting diodes (LEDs) are a highly versatile light source that have been widely employed in various fields. In order to maximize its quantum efficiency, it is essential to boost the efficiency of light extraction. Internal photon reflection can have a distinct negative impact on the luminous output power of GaN-based LEDs, which can be addressed by surface and interface texturing of different LED layers. This article discusses the mechanisms of light extraction losses in GaN-based LEDs and summarizes various surface and interface coarsening techniques proposed for improving the light extraction rate, including a range of physical and chemical etching methods.
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