Research on influence of parasitic resistance of InGaAs solar cells under continuous wave laser irradiation

Abstract

InGaAs solar cells were irradiated by 1060-1080nm continuous wave (CW) laser, and studied the laser-electrical conversion and damage experiment with the power density as 97mW/cm2 and 507W/cm2 respectively. The result indicated that there is no obvious damage phenomenon but air layer appeared in the damaged region, and there is no direct relationship between the area and the extent of damage. Moreover, the p-n junction in the damage zone was destroyed, lost the ability of photoelectric conversion. The region acts as a resistance between the two electrodes, resulting in an increase in the leakage current of the solar cells and a decrease in the parallel resistance, which is the main reason leading to the decline of open circuit voltage, short circuit current and conversion efficiency. This paper would provide a reference for wireless energy transmission and the subsequent laser damage of solar cells.