Abstract
This study proposes a transient measurement method (TMM) for minimizing self-heating in AlGaInP Ultra-High-Brightness LEDs (UHB-LEDs) under low-to-high bias current. The TMM was validated by the wavelength shift method. The luminous intensity ratio measured by the TMM was similar to that in the ideal device under low-to-high current. The contribution of internal quantum efficiency loss to self-heating temperature and electrical efficiency loss affecting the efficiency droop of AlGaInP UHB-LEDs were determined by TMM because of the temperature dependence of injection efficiency and internal quantum efficiency. The analytical results showed 2.4% difference in wall-plug efficiency (WPE) droop at 1.6 A was contributed by internal quantum efficiency and injection efficiency loss. The remaining 10.1% difference was contributed by electrical efficiency loss. This study also discussed the main mechanism, the high contact and sheet resistance resulting in current crowding, that affects electrical efficiency loss, and a qualitative analysis and recommendations for AlGaInP UHB-LEDs design were demonstrated to eliminate efficiency droop.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
