Abstract
Based on SiGe-OI (Silicon Germanium on Insulator) material, SiGe-OI electro-optic modulator is established, and PIN electrical modulation structure has been researched. The carrier injection concentration of electro-optical modulator with structure parameters, including the doping concentration of active region, the width of active region, the width between active region and waveguide, Ge content and the other parameters are analyzed, and the device structure parameters are optimized. Compared with SOI (Silicon on Insulator) electro-optic modulator injection concentration, SiGe-OI electro-optic modulator has higher carrier injection efficiency at the same modulation conditions. Accordingly, modulation voltage and modulation power can be effectively reduced.
Published Version
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