Abstract
A monolithic-integrated 3-D magnetic field sensor is proposed in this paper, which is composed of four silicon magnetic sensitive transistors and a Hall magnetic field sensor. Using microelectromechanical system (MEMS) technology, the chip of the sensor was designed and fabricated on a p-type silicon wafer with a higher resistivity. At the room temperature, the magnetic sensitivities $S_{xx}$ and $S_{yy}$ on the $x$ - and $y$ -directions are 77.5 and 78.6 mV/T at power supply $V_{DD}= 5.0$ V and base injection current $I_{b}= 1.0$ mA, respectively. In addition, the magnetic sensitivity $S_{zz}$ on the $z$ -axis is 77.4 mV/T at $V_{DD}= 5.0$ V. The experimental results show that the proposed sensor has a good uniformity of magnetic sensitivity, besides achieving the measurement to 3-D magnetic fields and the cross sensitivities are less than 3% at $B\le 0.8$ T.
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