RESEARCH OF THE INDIUM ARSENIDE IMPULSE PROPERTIES

Abstract

Indium arsenide is a promising material for creation of high-performance electronic and optoelectronic devices. A high level of knowledge of indium arsenide properties will make it possible to predict the potential possibilities of its application, as well as multicomponent semiconductors based on it. The problem of studying the properties of InAs in the regime of a strong electric field is relevant.
 In scientific and technical sources, data on the impulse properties of indium arsenide in the regime of a strong electric field are poorly presented. The purpose of the work is to study the field-velocity dependence in the pulsed mode of a strong electric field and to analyze the response to changes in its amplitude, pulse duration, and leading edge duration.
 The method of relaxation equations was used to analyze the field-velocity characteristic in the regime of a strong electric field. In the electric field static regime, the highest value of the drift velocity was 3·105 m/s (with a field amplitude of 2 kV/cm), in the saturation section it was 0.9·105 m/s.
 An analysis of the field-velocity dependence in the pulsed mode of a strong electric field showed that with an increase in the field amplitude, the maximum value of the drift velocity increases, and the duration of the "overshoot" shortens. Fields of 5–30 kV/cm correspond to an increase in the highest velocity value by a factor of 2.7–8. The spatial distribution of the drift velocity gave an estimate of the average velocity and distance traveled by charge carriers at different field values.
 An increase in the duration of the leading edge duration of the field pulse caused a delay in transient processes. At 12 kV/cm < E, the peak value of the drift velocity additionally decreases. The duration of a strong electric field pulse has a significant effect only at values less than the formation time of the drift velocity maximum. Such values of the pulse duration lead to a decrease in the rate of drift and relaxation processes.
 Comparison of the field-velocity dependences in the high-field pulsed mode showed that the maximum value of the drift velocity of InAs electrons exceeds the corresponding values: GaAs, InP – by several times; GaN - an order of magnitude. The duration of the “ overshoot ” of the drift velocity for InAs is somewhat longer than for GaAs, InP, GaN.