Research of Test Cells of Power-independent Magnetoresistive Memory

Abstract

The new generation non-volatile memory devices are actively developed and researched. The MRAM test cell was manufactured by the Scientific-Manufacturing Complex "Technological Center". The control measuring system (CMS) was developed and manufactured for research. The article presents an algorithm for the operation of the CMS, which makes it possible to study spin-tunnel magnetoresistive (STMR) elements of a non-volatile MRAM test cell. The main investigated characteristics of the MRAM test cell are the currents at which the cell is magnetized. Methods for measuring resistance in a changing magnetic field created by the buses and determining currents for the magnetization reversal of an STMR element are presented in this article. The recording current of STMR element for the line was 40 mA, for the column was 67 mA. The next stage of the study was writing and reading of the STMR elements. The resistance of the STMR element with "0" logical state is 6,8 Q and with "1" logical state is 13,4 Q. The stability of the MRAM element is confirmed by performing switch operations while maintaining the levels of logical states.