Abstract
The article presents the research of spectral properties of Fe 2+ , Co 2+ and Ni 2+ ion energy structure in semiconductor materials А II В VI ( ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe) and the ratio of these spectral structures of absorption and luminescence transitions with band gap of materials А II В VI . This article evaluates the possibility of obtaining laser action on these materials in 1.5–3 microns range, as optic fiber data lines have a transparency window in that range. The results are valuable for various other applications of tunable semiconductor lasers.
Highlights
RESEARCH OF SPECTRAL CHARACTERISTICS OF IR LASERS OF SEMICONDUCTORS AIIBVI DOPED WITH Fe2+, Co2+ AND Ni2+ IONS
The article presents the research of spectral properties of Fe2+, Co2+ and Ni2+ ion energy structure in semiconductor materials MIIOVI ( ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe) and the ratio of these spectral structures of absorption and luminescence transitions with band gap of materials MIIOVI
This article evaluates the possibility of obtaining laser action on these materials in 1.5–3 microns range, as optic fiber data lines have a transparency window in that range
Summary
RESEARCH OF SPECTRAL CHARACTERISTICS OF IR LASERS OF SEMICONDUCTORS AIIBVI DOPED WITH Fe2+ , Co2+ AND Ni2+ IONS. The article presents the research of spectral properties of Fe2+, Co2+ and Ni2+ ion energy structure in semiconductor materials MIIOVI ( ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe) and the ratio of these spectral structures of absorption and luminescence transitions with band gap of materials MIIOVI. This article evaluates the possibility of obtaining laser action on these materials in 1.5–3 microns range, as optic fiber data lines have a transparency window in that range. The results are valuable for various other applications of tunable semiconductor lasers. BHCIDJ ?CKL?MN 7?D=E=IA
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