Research of Gate-All-Around Field-Effect Transistors

Abstract

This report provides an overview of GAA FETs also known as Gate-All-Around FETs, focusing on their introduction and limitations, based on a comprehensive review of current literature and online resources. GAA FETs represent an evolution of FinFET technology, which itself was developed from traditional MOSFET designs. Each iteration has aimed to improve performance and overcome limitations of its predecessor. The GAA architecture offers superior electrostatic control, resulting in higher drive currents, reduced leakage, and improved subthreshold swing, making it ideal for high-performance, low-power applications. Despite these advantages, GAA FETs still face challenges with short-channel effects (SCEs) as device dimensions shrink. Gate-All-Around (GAA) is a transistor architecture designed to address the limitations of the FinFET design. Unlike FinFET, where the channel is surrounded on three sides by the gate, GAA surrounds the channel on all four sides by turning the FinFET structure sideways, making the channels horizontal. This design provides enhanced control over the transistor switch. The fabrication of GAA transistors involves a series of highly precise processes, which enable improved transistor scaling with reduced variability, resulting in increased performance and lower power consumption.