Abstract
The temperature gradient for the sapphire crystals growth by the horizontal directed crystallization method was defined by mathematical simulation with the help of finite volume method in three-dimensional coordinates on the unstructured grid. The estimation of gas bubbles sizes near the liquid crystallization front was determined taking into account temperature gradients during sapphire growth. The results of simulation of sapphire crystals growth allows one to understand the physical nature of this process and to come nearer to solution of the main problem of processing such crystals with the reduced defect level.
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