Abstract
In this article we present an integrated approach to sapphire crystals growth simulation. Thermally induced stresses in sapphire crystals growing by horizontal directed crystallization are simulated by finite element method. The simulation results correspond to experimental observations. The results of the investigation allow to improve the process of crystal growth to obtain high quality large sapphire crystal.
Highlights
Sapphire (α-Al2O3) is one of the promising materials nowadays
Induced stresses in sapphire crystals growing by horizontal directed crystallization are simulated by finite element method
Horizontal directed crystallization (HDC), Czochralski, Kyropulos and Stepanov methods are used for obtaining large-size sapphire monocrystals for electronic engineering
Summary
- Analysis of heat transfer processes for sapphire growth by horizontal directed crystallization method Yu.
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