Abstract
The parasitic capacitance effect and its influence to the performance have been investigated in Bipolar Junction Metal-Oxide-Semiconductor Field-Effect Transistor (BJMOSFET). The frequency characteristic equivalent circuit and high frequency response model of BJMOSFET have been presented. The frequency characteristic of BJMOSFET is simulated using the multi-transient analytical method and PSPICE9 simulator. The conclusions that BJMOSFET owns less total capacitance, wider frequency band, better transient characteristic and better frequency responses are reached by comparing with the traditional MOSFET at the same structure parameters and bias conditions. BJMOSFET, as a novel promising high frequency device, would be desired to find application in future integrated circuit.
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