Research into regularities of pore formation on the surface of semiconductors

Sergey Vambol,Olexandr Kondratenko,Olga Hurenko,Viola Vambol,Yana Suchikova,Sergey Onishchenko,Ihor Bogdanov

doi:10.15587/1729-4061.2017.104039

Abstract

A general procedure is devised to control the process of formation of porous layers on semiconductor surfaces by the method of electrochemical etching. When controlling the process of pore formation on the surface of crystal, it is necessary to consider: conditions of pore formation, requirements that are put forward to quality of the obtained nanostructures, and mechanisms that underlie the process of pore formation. It is shown that the built scheme could be used for different cases of the synthesis of nanostructured semiconductors. We investigated the processes that underlie pore formation and define morphological properties of nanostructures. A thermodynamic analysis of processes at the boundary of contact semiconductor–electrolyte was performed. We examined a relative drop in potential in the Helmholtz layer, which is an important characteristic of the process of pore formation on the surface of crystal. Main morphological criteria are selected of quality of porous nanostructures for their application in solar batteries. These include diameter and depth of the pore, a degree of porosity of the surface of a nanostructured crystal. Taking into account these criteria, we received porous spaces on the surface of semiconductors A3V5 that could be used for solar cells. We determined the value of boundary voltage of the early pore formation for semiconductors of group A3V5 during etching in the electrolyte HF:C2H5OН:H2O=1:2:1 for 15 min. It was established that at chosen conditions of etching. the largest capacity to pore formation is displayed by crystals of indium phosphide. The results obtained demonstrate that at the same conditions of etching semiconductors possess different ability to form pores

Highlights

Interest in nanostructures is associated with the possibility of substantial modification of the properties of known substances, as well as new opportunities opened up by nanotechnologies in creating materials and products from the structural elements of nanometer range
High-quality Ukrainian products are capable of competing with them at decent level. This necessitates a change in the underlying principles in the production management processes at Ukrainian enterprises, as well as creation of quality control systems, similar to those that exist in developed countries
Relevant are the tasks on improving the quality of raw materials for solar cells [1,2,3]

Summary

Introduction

Interest in nanostructures is associated with the possibility of substantial modification of the properties of known substances, as well as new opportunities opened up by nanotechnologies in creating materials and products from the structural elements of nanometer range. Ukraine possesses potential in the field of renewable energy sources, in particular, solar energy In this context, relevant are the tasks on improving the quality of raw materials for solar cells [1,2,3]. Relevant are the tasks on improving the quality of raw materials for solar cells [1,2,3] For these purposes, nanostructured materials have been employed [4, 5]. That is why formation of electron nano-objects based on the modified semiconductor structures is a relevant task

Literature review and problem statement

The aim and objectives of the study