Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Subcontract Report, 2 May 2000--2 July 2003

Abstract

Our work consists of hydrogenating silicon (Si) samples by different methods such as low-energy implantation, electron cyclotron resonance (ECR) plasma, and thermal diffusion. The samples will be provided through NREL. The experimental work carried out at Penn State involves the study of hydrogen interaction with defects, trapping, migration, and formation of complexes. The principal vehicle for the latter study will be ion implantation, and the intent is to understand mechanisms of defect passivation and activation by hydrogen. The theoretical studies will consist of the calculation of the structure and parameters related to hydrogen diffusion and interactions of hydrogen with transition metal impurities in silicon. Experimental studies will involve measurements of hydrogen and hydrogen-impurity complexes, and diffusion properties of various species of hydrogen in Si. The experimental work at Penn State includes introduction of hydrogen in a variety of photovoltaic Si by ECR plasma, low-energy ion implantation, and thermal diffusion. The specific tasks will be the evaluation of hydrogen interaction with defects engineered by ion implantation; defect passivation, activation, and migration in hydrogenated Si under thermal anneal; and electrical activity of hydrogen-impurity complexes. Electrical characterization will entail I-V and C-V measurements, spreading resistance, and deep-level transient spectroscopy.