Abstract
Optical detection is of great significance in various fields such as industry, military, and medical treatment, especially ultraviolet (UV) photodetectors. Moreover, as the demand for wearable devices continues to increase, the UV photodetector, which is one of the most important sensors, has put forward higher requirements for bending resistance, durability, and transparency. Tin oxide (SnO2) has a wide band gap, high ultraviolet exciton gain, etc., and is considered to be an ideal material for preparing UV photodetectors. At present, SnO2-based UV photodetectors have a transparency of more than 70% in the visible light region and also have excellent flexibility of 160% tensile strain. Focusing on SnO2 nanostructures, the article mainly summarizes the progress of SnO2 UV photodetectors in flexibility and transparency in recent years and proposes feasible optimization directions and difficulties.
Highlights
Published: 28 November 2021As one of the most important optoelectronic devices, UV photodetectors are hugely in demand in space communications, missile warning, ozone layer monitoring, flame detection, and spectral analysis in the medical field [1,2,3,4,5,6]
This review mainly focuses on UV photodetectors based on SnO2, starting from the basic parameters and structures of the photodetectors, and discussing the progress of transparent, flexible UV photodetectors in recent years
Dark current is generated by the following situations [36]: (1) When an ohmic contact is formed between the electrode and the semiconductor layer, there is a potential difference between the electrode and the semiconductor layer, and electrons and holes will move to the positive electrode and the negative electrode, respectively, to form a current; (2) When the metal and the semiconductor are in contact, due to the tunneling effect, the carrier may pass through the barrier and form a current; (3) If the semiconductor is non-uniformly doped, carriers will diffuse from the high-concentration area to the low-concentration area, and so on
Summary
As one of the most important optoelectronic devices, UV photodetectors are hugely in demand in space communications, missile warning, ozone layer monitoring, flame detection, and spectral analysis in the medical field [1,2,3,4,5,6]. Recent studies have shown that the use of surface defect states to capture weak bounded excitons can generate large ultraviolet exciton gains in SnO2 nanostructures through the giant oscillator strength effect, and due to the large surface area to volume ratio of SnO2 nanostructures, the number of surface defects has increased significantly [28,29]. These factors make it possible to prepare high-gain SnO2 nanostructured UV photodetectors. The optimization of the performance of SnO2 UV photodetectors is discussed
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