Abstract
This review article summarizes the recent development of state-of-the-art research and development in wide band gap based ultraviolet (UV) photodetectors (PDs). ZnO and alloyed ZnO materials are considered as a potential candidate for the wide band gap material-based UV optoelectronics devices. A comparative review of the UV PDs grown by different growth techniques like molecular beam epitaxy, metal organic chemical vapor deposition, pulsed laser deposition, and sputtering methods has been illustrated. Sputtered ZnO and MgZnO UV PDs show promising behavior with good responsivity and response time. Further among sputtering, the dual ion beam sputtering method of fabricating UV PDs exhibited zero biased photoresponse, high quantum efficiency, and also ensures ease of fabrication.
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