Abstract
This article describes the reduction process of graphene oxide films deposited on various substrates by 445 nm laser irradiation with exposure time from 4·10-3 to 3·10-1 s. AFM images of the deposited films are presented. To obtain a better quality of the reduced graphene oxide films on substrates, we found the optimal ratio of the partial pressures of air and argon in the background environment. Variation of laser irradiation exposure time allowed us to determine its influence on sheet resistance and the ratio of Raman peaks intensities ID/IG, I2D/IG of the reduced material. As a result, we demonstrated the possibility of graphene conductive traces formation with a sheet resistance of 188 Ohm/□ at 0.1 um film thickness.
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