Abstract
• Uniform and controlled graphene oxide films were deposited on substrates using Langmuir–Blodgett (LB)-based method. • The influence of thermal reduction on GO films was systematically characterized. • 800 °C was considered the most effective for reduction. • The optical properties were investigated for different reduced GO films. • A tunable surface wettability of GO films was found after heat treatment. The paper reports an effective LB-based process to produce graphene oxide (GO). Uniform and controlled graphene oxide (GO) films were deposited on substrates by a simple and high-efficient Langmuir–Blodgett (LB)-based method. The influence of thermal reduction on GO films was systematically characterized and the annealing temperature of 800 °C was considered the most effective for reduction of GO. The optical and electrical properties were investigated for different reduced GO films to obtain the excellent sheet resistances of 440–620 Ω/sq with 60–70% range of light transparencies. A tunable surface wettability of GO films was found after heat treatment.
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