Abstract
This paper introduces the design and fabrication process of 1200V SiC trench Junction Barrier Schottky (JBS) diode, and tests the performance of the diode. The cell and terminal of diode structure both adopt trench structure, by simulation and early stage, the structural parameters of device cell and terminal structure are determined, and the fabrication of 1200V SiC trench JBS diode is completed through an intact technological process. The test results show that the leak current of the device under 1200V at room temperature is about 0.36uA, when the current is 20A, the forward voltage drop is 1.53V.
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