Abstract
One of the features of spin-transfer torque (STT)-based magnetic random access memories (spin-RAMs) is a fast write cycle; however, switching properties in the subnanosecond regime for MgO-based magnetic tunnel junctions (MTJs) are still unclear. In this work, we demonstrated subnanosecond magnetization switching by STT for MgO-based MTJs. We also discuss the thermal effect on subnanosecond STT switching, as well as the subnanosecond pulse width that is dependent on the remarkable plateau that switching probability has under a zero-bias field.
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