Abstract
AbstractCopper nitride film prepared by plasma‐immersion ion implantation (PIII) is demonstrated to exhibit reversible resistance variance character. By forming a gradually distributed nitrogen concentration in the Cu‐nitride film, the nitride‐based memory devices show bipolar nature with a low operation voltage, forming‐free characteristics and a distinguishable resistance ratio. The bipolar switching behavior is attributed to the formation and rupture of conductive filaments within a cycle, which is confirmed by spreading‐resistance images of a conducting atomic force microscope. Based on X‐ray photoelectron spectroscopy (XPS) analysis, semiconducting Cu3N phase and metallic Cu4N phase coexist in the copper nitride film and local conducting filaments might be formed by interconnection of the metallic phases by migration of Cu+ ions under a bias voltage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
