Abstract
In this paper, we investigated gate-all-around silicon nanowire (NW)-based junctionless tunnel field effect transistor (FET) which is called junctionless tunnel NWFET (JL-TNWFET) with the impact of variation of amount of uniaxial tensile strain on band-to-band tunneling (BTBT) injection and electrical characteristics. The tunneling model is first calculated for measurements of gate-controlled BTBT in the JL-TNWFET and is compared with the strained JL-TNWFET with similar technology parameters. The simulation results show that the JL-TNWFET have potential for low-operating-voltage application (Vdd$_amp_$lt;0.4V) and represent high ION/IOFF ratio and steep subthreshold swing over many decade while encompassing high ON-state currents. Whereas, the strained JL-TNWFET due to thinner tunneling barrier at the source-channel junction which leads to the increase of carrier tunneling rate shows excellent characteristics with high ON-current, superior transconductance (gm) and cut-off frequency (ƒT).
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