Replacing two As atoms in silicene nanoribbons in the presence of an external electric field

Abstract

With the continuous development of nanotechnology and science, its life application is extremely large. Silicene nanoribbons (SiNR) are nanostructures with many advantages, replacing another element in SiNR helps to create new materials with many outstanding properties. This work studies the doping of two arsenic (As) atoms at different positions in the unit lattice cell of SiNR, the system is placed in an electric field. The presence of an electric field in the system causes changes in the energy band structure and the density of the state. There are three sites to be doped in here, namely the meta, ortho, and para position. One of these three positions will be the most optimal, the position at which the formation energy is the lowest. The structure diagrams of the energy region and state density will be drawn, compared, and examined.