Abstract
Silicene nanoribbons have been studied a lot in recent years, it is a nanostructure with enormous applications. The doping of another element into the unit cell changes the electrical and magnetic properties of the material, which creates new research directions in materials science. Based on the DFT theory, this work studies the doping phosphorus atoms and in silicene nanoribbons in the presence of an external electric field of about 0.1 V/Angstrom. The work also limited the doping study in two cases: The doping case of one phosphorus atom and the 100% doping configuration. There are two doping positions of a phosphorus atom, the top position, and the valley position, and the formation energy will find the optimal position. The energy band structure and state density will also be drawn, examined, and compared.
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