Abstract
A tandem hybrid gas cleanup system, consisting of a BaTiO/sub 3/ packed-bed plasma reactor and a CaCO/sub 3/ adsorbent filter, was used to study the removal of NF/sub 3/ from semiconductor-process flue gases. Plasma-chemical kinetics of N/sub 2/-NF/sub 3/-O/sub 2/-H/sub 2/ gas mixtures suggested byproducts observed in the experiments. The laboratory-scale system showed NF/sub 3/ removal at atmospheric pressure. Typically, 100% NF/sub 3/ abatement was achieved with an inlet concentration of 5000 ppm and a gas residence time in the reactor less than 10 s.
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