Remote plasma enhanced metalorganic chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanium

Abstract

Effect of H2 and N2 plasma in the remote plasma enhanced metalorganic chemical vapor deposition of TiN (titanium nitride) from tetrakis-dimethyl-amido-titanium was studied in the deposition temperature range of 200–400 °C. The deposition rate with H2 plasma is faster than with N2 plasma and both processes showed similar activation energies, 16.7 and 18.3 kcal/mol, in the deposition temperature range of 200–300 °C. Above this temperature range, the deposition rate was decreased due to the gas phase dissociation of the precursor. H2 plasma was effective in removing hydrocarbon impurities and carbon was incorporated as a form of TiC but with N2 plasma, TiN film was formed with rough surface due to the incorporation of free carbon. The film with H2 plasma showed low resistivity due to the lower incorporation of free carbon.