Abstract
Effect of H2 and N2 plasma in the remote plasma enhanced metalorganic chemical vapor deposition of TiN (titanium nitride) from tetrakis-dimethyl-amido-titanium was studied in the deposition temperature range of 200–400 °C. The deposition rate with H2 plasma is faster than with N2 plasma and both processes showed similar activation energies, 16.7 and 18.3 kcal/mol, in the deposition temperature range of 200–300 °C. Above this temperature range, the deposition rate was decreased due to the gas phase dissociation of the precursor. H2 plasma was effective in removing hydrocarbon impurities and carbon was incorporated as a form of TiC but with N2 plasma, TiN film was formed with rough surface due to the incorporation of free carbon. The film with H2 plasma showed low resistivity due to the lower incorporation of free carbon.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.