Abstract
Platinum and platinum oxide films were deposited by remote plasma atomic layer deposition (ALD) from the combination of (methylcyclopentadienyl)trimethylplatinum precursor and plasma. A short plasma exposure (0.5 s) resulted in low resistivity , high density , cubic Pt films, whereas a longer plasma exposure (5 s) resulted in semiconductive films. In situ spectroscopic ellipsometry studies revealed no significant nucleation delay, different from the thermal ALD process with gas which was used as a benchmark. A broad temperature window for remote plasma ALD of Pt and was demonstrated.
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