Abstract
The transfer characteristics of a metal-insulator-semiconductor (MIS) tunnel diode (TD) controlled by a separated MIS TD as gate were investigated. Negative transconductance (NT) exists around the flat-band region in the transfer curve even though the separation between the gate and the MIS TD is large (up to several tens of micrometers). We called it remote gate-controlled NT (RG-NT). With the aid of the Technology Computer Aided Design simulation, the turn around behaviors of the lateral electric field and electron concentration around the flat-band region explain well the RG-NT phenomenon. The peak-to-valley current ratio (PVCR) of the RG-NT increases with the tunnel oxide thickness. The maximum PVCR obtained in this work is $1.3 \times 10^{6}$ while the oxide thickness is 3.3 nm.
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