Abstract
We report on the magnetic field control of a bipolar resistive switching in Ag/TiO2/FTO based resistive random access memory device through I–V characteristics. Essentially, in the presence of magnetic field and in the low resistance state, an abrupt change in the resistance of the device demands higher voltage, hinting that residual Lorentz force plays a significant role in controlling the resistance state. Endurance characteristics of the device infer that there is no degradation of the device even after repeated cycling, which ensures that the switching of resistance between ‘off’ and ‘on’ states is reproducible, reversible and controllable. Magnetic field control of ‘on’ and ‘off’ states in endurance characteristics suggest that this device can be controlled in a remote way for multi-bit data storage.
Highlights
We demonstrated the stable bipolar resistive switching in Ag/TiO2/FTO device and explored the effect of the magnetic field on the resistance switching behavior
Endurance characteristics inferred an increase in resistance values with the magnetic field
Tuning the resistance state for different on states as well as for off state (+2 V) with magnetic field reveal that resistance states can be tuned in a remote way
Summary
We demonstrated the stable bipolar resistive switching in Ag/TiO2/FTO device and explored the effect of the magnetic field on the resistance switching behavior.
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