Abstract
This work investigated the impact of using the dual-triangle quantum barriers (DTQBs) in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs). The DUV-LED with DTQBs notably exhibits higher internal quantum efficiency and light output power as compared to the conventional DUV-LED. The advantage of utilizing DTQBs can be ascribed to the significant improvements of carrier injection efficiency, which modulates the distribution of holes and electrons and consequently increases the radiative recombination rate. More importantly, by looking into the band structure characteristics in the active region of DUV-LEDs, it is found that the hole–electron’s wave-function overlap has been enhanced due to the Band-filling effect by the DTQBs design, even though the electrostatic field and Quantum-confinement-stark-effect increase. Therefore, the proper design of the energy-band-structure engineering of QBs can enhance photoelectric performance of DUV-LEDs.
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