Abstract
AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) suffer serious light extraction problems. In this work we report a sidewall reflection method to enhance the light extraction of AlGaN-based DUV LEDs. The method includes mesa micro array designs and on-chip high reflective metal pads for DUV light. The 278-nm LEDs using this method show a 30.% improvement in light output power (LOP) compared to LEDs without high reflective metal pads. The dependence of LOP and voltage on micro array mesa size is also investigated. The LOP of the AlGaN-based DUV LED can reach 6.8 mW at 100 mA and nearly 25 mW at 500 mA. The L80 lifetime exceeds 4000 hours.
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