Abstract
The photocurrent and incident photon conversion efficiency of In0.20Ga0.80N increased about 2 times after a simple electrochemical surface treatment. X-ray photoelectron spectroscopy and photoluminescence analysis suggested that In-rich InGaN region on the surface of the In0.20Ga0.80N electrode was removed by using the electrochemical surface treatment. The enhancement of the photocurrent was attributed to the removal of In-rich InGaN phases caused by indium segregations on the surface of the electrode, which played a major role as surface recombination centers of photo-generated electron-hole pairs.
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