Abstract
Detailed understanding of the epitaxial grown gold thin film is highly desirable, both for fundamental physical reasons and due to increasingly sophisticated applications. In this paper, we present the utilization of the significant advantages of both REM and RHEED in a commercial Philip-400T instrument to investigate the crystalline quality and topography of epitaxical gold layers on GaAs(110) surfaces.The specimen preparation was carried out in a commercial FC-12E UHV system containing a quartz crystal sensor for thickness control. The experimental arrangement inside the UHV chamber is shown in Fig. 1, where the evaporating source is set in a position equally distance from the crystal sensor and the specimen substrate. The bulk shield next to the specimen is to block a part of the gold flux, thus the growing film with a certain variation of thickness can be formed on the GaAs (110) plane which faces the shield.
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