Abstract
A new polycrystalline silicon thin film transistor (poly-Si TFTs) employing XeCl excimer Laser Irradiation on the Gate Oxide (LIGO), which exhibits long term stability under electrical stress, is proposed and fabricated. The proposed method causes a rapid high temperature at poly-Si/SiO2 after gate insulator deposition. Laser irradiation on the gate oxide improved the properties of the oxide so that the transfer characteristics and electrical reliability of the proposed TFTs can be improved.
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