Abstract
A low-cost and eco-friendly die attach process for high temperatures should be developed owing to the expansion of the field of high-temperature applications, such as high-power and high-frequency semiconductors. Pb-based and Au-based systems have been used as conventional die attach materials for high-temperature devices. However, these materials exhibit environmental problems and are expensive. Here, we show that the die attach process using the backside metal of the Ag/Sn/Ag sandwich structure is successfully developed for the mass production of Si devices. It has a low-temperature bonding process (235 °C), a high remelting temperature (above 400 °C), and rapid bonding time (20 ms). In addition, it exhibits better properties than Au-12Ge and Pb-10Sn backside metals, which are conventional materials for the high-temperature die attach process. After the die bonding process, various reliability tests of Si devices with the Ag/Sn/Ag backside metal structure were performed.
Highlights
The demands for high-temperature die attach materials that have been utilized for high-temperature semiconductor devices are increasing because of the expansion of high-power and high-frequency device applications
The results prove that the ASA– backside metal (BSM) can be applied for semiconductor packaging
We demonstrated a low-cost and eco-friendly die attach process using the ASA-BSM structure for fabricating semiconductor devices
Summary
The demands for high-temperature die attach materials that have been utilized for high-temperature semiconductor devices are increasing because of the expansion of high-power and high-frequency device applications. High Pb-Sn alloys, which are cheap and exhibit good reliability, are excellent materials for high-temperature processes. Sn–Sb alloys exhibit a stable microstructure and good creep properties[12] They cannot be used for the die attach process, due to the toxicity of Sb. they cannot be used for the die attach process, due to the toxicity of Sb These materials exhibit high melting temperatures and eutectic or near-eutectic compositions, and the die bonding process is conducted at a relatively high temperature (~300 °C). The backside metallization process is typically used to attach a chip to a lead frame for high-power and high-frequency semiconductor packaging because it exhibits several advantages such as excellent bond-line and good electrical and thermal conduction[18]. Our die attach process offers a rapid bonding time (only 20 ms) and is reliable; it is applicable to the mass production of semiconductor packaging
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