Abstract
Sputtered amorphous indium-gallium-zinc -oxide (a-IGZO) Schottky barrier diodes (SBDs) were comparatively investigated without and with a passivation layer (PL). The a-IGZO SBDs without PLs were found to be highly unstable in the atmosphere and under electrical stress. During the implementation of silicon dioxide (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) PL, the associated thermal oxidization and hydrogen doping resulted in high-performance metrics, including an ideality factor close to the unity, a high Schottky barrier of 0.82 eV, and a large current rectification ratio of over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> . Benefited from the PL protection and ideal Schottky contact, the environmental and electrical stabilities of SBDs were significantly enhanced.
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