Abstract

Charge trapping/detrapping in Al/ZrO2/GeOxNy/p-Ge MIS capacitors have been studied under dynamic voltage stresses of different amplitude and frequency in order to analyze the transient response and the degradation of the oxide as a function of the stress parameters. The current transients observed in dynamic voltage stresses have been interpreted in terms of the charging/discharging of interface and bulk traps. The evolution of the current during unipolar and bipolar voltage stresses shows the degradation being much faster at low frequencies than at high frequencies.

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